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What are the differences between diodes?

There are many kinds of diodes, each with different functions and different from each other, so when we choose a product, we have to choose the right one according to its different characteristics. If we forget this very important point, then the chosen product may not be suitable for us.


1. Rectifier diode.

In principle, the DC output from the input AC is a rectifier, and the rectifier whose output current is greater than 100mA is usually called a rectifier with the magnitude of the rectifier current (100mA) as the boundary.


2. Fast recovery diode.

It can be understood as a fast diode; because the base is very thin and the reverse recovery charge is very small, not only the trr value is greatly reduced, but also the transient forward voltage drop is reduced, so that the tube can withstand a high reverse working voltage. Therefore, the reverse recovery time is fast, which is usually used in switching power supply as rectifier diode and inverter circuit as continuous current and reverse voltage absorption diode.


3. Switching diode.

Under the action of forward voltage, the resistance is very small, in the on state, which is equivalent to a switch on; under the action of reverse voltage, the resistance is very large, in the cut-off state, like a disconnected switch. All kinds of logic circuits can be formed by using the switching characteristics of diodes.


4. Voltage stabilizing diode.

It is made of the reverse breakdown characteristic of the diode. the voltage at both ends of the circuit remains basically unchanged and plays the role of stabilizing voltage. it is a product to replace the voltage-stabilized electronic diode. The diode, which is made into the diffusion type or alloy type of silicon, is a diode with rapid changes in the reverse breakdown characteristic curve, and is used as a control voltage and a standard voltage.


5. Schottky diode.

A "metal semiconductor junction" diode with Schottky characteristics. The positive starting voltage is low. In addition to materials, the metal layer can also be made of gold, molybdenum, nickel, titanium and other materials. Its semiconductor materials are silicon or gallium arsenide, mostly N-type semiconductors. The device is conducted by many carriers, so the reverse saturation current of the device is much larger than that of the PN junction conducted by a few carriers. Because the storage effect of minority carriers in Schottky diodes is very small, its frequency response is only limited by the RC time constant, so it is an ideal device for high frequency and fast switching.


6. Transient voltage suppression diode.

The circuit can be protected by fast overvoltage, which can be divided into bipolar type and unipolar type

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